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|Title:||Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells|
|Authors:||Karunasiri, Gamani |
|Citation:||Karunasiri, Gamani,Shih, Robert,Chen, John (1995). Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells. Annual Device Research Conference Digest : 122-123. ScholarBank@NUS Repository.|
|Abstract:||This paper reports the first demonstration of a normal incident infrared detector using n-type InxGa1-xAs/GaAs multiple quantum wells. The structure of the detector consists of 50 periods of 40 angstrom thick In0.3Ga0.7As wells doped with Si approx. 2 × 1018/cm3 separated by 300 angstrom thick undoped GaAs barriers. The entire structure is sandwiched between top 0.5 μm and bottom 1 μm n+ GaAs layers for ohmic contacts. Absorption of the sample is first characterized by transmission measurement at room temperature using a Fourier transform infrared spectrometer. A waveguide geometry was employed to enhance the absorption between bound-to-continuum transitions. Absorption spectra were characterized by polarization dependence measurement in order to identify different transitions.|
|Source Title:||Annual Device Research Conference Digest|
|Appears in Collections:||Staff Publications|
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