Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81610
Title: Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells
Authors: Karunasiri, Gamani 
Shih, Robert
Chen, John
Issue Date: 1995
Citation: Karunasiri, Gamani,Shih, Robert,Chen, John (1995). Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells. Annual Device Research Conference Digest : 122-123. ScholarBank@NUS Repository.
Abstract: This paper reports the first demonstration of a normal incident infrared detector using n-type InxGa1-xAs/GaAs multiple quantum wells. The structure of the detector consists of 50 periods of 40 angstrom thick In0.3Ga0.7As wells doped with Si approx. 2 × 1018/cm3 separated by 300 angstrom thick undoped GaAs barriers. The entire structure is sandwiched between top 0.5 μm and bottom 1 μm n+ GaAs layers for ohmic contacts. Absorption of the sample is first characterized by transmission measurement at room temperature using a Fourier transform infrared spectrometer. A waveguide geometry was employed to enhance the absorption between bound-to-continuum transitions. Absorption spectra were characterized by polarization dependence measurement in order to identify different transitions.
Source Title: Annual Device Research Conference Digest
URI: http://scholarbank.nus.edu.sg/handle/10635/81610
Appears in Collections:Staff Publications

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