Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells
Karunasiri, Gamani Shih, Robert Chen, John
Shih, Robert
Chen, John
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Abstract
This paper reports the first demonstration of a normal incident infrared detector using n-type InxGa1-xAs/GaAs multiple quantum wells. The structure of the detector consists of 50 periods of 40 angstrom thick In0.3Ga0.7As wells doped with Si approx. 2 × 1018/cm3 separated by 300 angstrom thick undoped GaAs barriers. The entire structure is sandwiched between top 0.5 μm and bottom 1 μm n+ GaAs layers for ohmic contacts. Absorption of the sample is first characterized by transmission measurement at room temperature using a Fourier transform infrared spectrometer. A waveguide geometry was employed to enhance the absorption between bound-to-continuum transitions. Absorption spectra were characterized by polarization dependence measurement in order to identify different transitions.
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Annual Device Research Conference Digest
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Date
1995
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Conference Paper