Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81596
Title: New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
Authors: Leang, S.E.
Chan, D.S.H. 
Chim, W.K. 
Issue Date: 1996
Source: Leang, S.E.,Chan, D.S.H.,Chim, W.K. (1996). New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs. Annual Proceedings - Reliability Physics (Symposium) : 311-317. ScholarBank@NUS Repository.
Abstract: A new charge-pumping technique to extract the spatial distribution of hot-carrier-induced interface states and trapped charges in MOS devices is proposed. This method is purely experimental and does not require simulation, and therefore can be applied to any MOSFET without the detailed knowledge of the device's structure. With this method, one is able to gain a better understanding of the degradation mechanisms taking place during hot-carrier stress.
Source Title: Annual Proceedings - Reliability Physics (Symposium)
URI: http://scholarbank.nus.edu.sg/handle/10635/81596
ISSN: 00999512
Appears in Collections:Staff Publications

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