Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/81589
DC Field | Value | |
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dc.title | New mechanism of leakage current in ultra-shallow junctions with TiSi2 contacts | |
dc.contributor.author | Lau, Wai Shing | |
dc.contributor.author | Qian, Peng Wei | |
dc.contributor.author | Zhao, Rong | |
dc.date.accessioned | 2014-10-07T03:09:54Z | |
dc.date.available | 2014-10-07T03:09:54Z | |
dc.date.issued | 1997 | |
dc.identifier.citation | Lau, Wai Shing,Qian, Peng Wei,Zhao, Rong (1997). New mechanism of leakage current in ultra-shallow junctions with TiSi2 contacts. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 207-212. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81589 | |
dc.description.abstract | For shallow n+/p and p+/n junctions with TiSi2 contacts, the leakage current quite frequently increases after silicidation. When the Ti layer for silicidation is thick, the leakage current of shallow p+/n junctions increases much more strongly than shallow n+/p junctions after silicidation. This is usually explained by Si consumption due to silicidation. When the Ti layer for silicidation is thin, the leakage current of shallow n+/p junctions increases more strongly than shallow p+/n junctions after silicidation. In this paper, a new mechanism of Ti+ drift due to the built-in electric field is proposed to explain the larger leakage current of shallow n+/p junctions than that of shallow p+/n junctions after silicidation. A numerical simulation with the pc-1d software package was performed to calculate the electric field distribution for shallow junctions under various conditions. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA | |
dc.description.page | 207-212 | |
dc.description.coden | 234 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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