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|Title:||New mechanism of leakage current in ultra-shallow junctions with TiSi2 contacts|
|Authors:||Lau, Wai Shing |
Qian, Peng Wei
|Source:||Lau, Wai Shing,Qian, Peng Wei,Zhao, Rong (1997). New mechanism of leakage current in ultra-shallow junctions with TiSi2 contacts. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 207-212. ScholarBank@NUS Repository.|
|Abstract:||For shallow n+/p and p+/n junctions with TiSi2 contacts, the leakage current quite frequently increases after silicidation. When the Ti layer for silicidation is thick, the leakage current of shallow p+/n junctions increases much more strongly than shallow n+/p junctions after silicidation. This is usually explained by Si consumption due to silicidation. When the Ti layer for silicidation is thin, the leakage current of shallow n+/p junctions increases more strongly than shallow p+/n junctions after silicidation. In this paper, a new mechanism of Ti+ drift due to the built-in electric field is proposed to explain the larger leakage current of shallow n+/p junctions than that of shallow p+/n junctions after silicidation. A numerical simulation with the pc-1d software package was performed to calculate the electric field distribution for shallow junctions under various conditions.|
|Source Title:||Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA|
|Appears in Collections:||Staff Publications|
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