Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81589
Title: New mechanism of leakage current in ultra-shallow junctions with TiSi2 contacts
Authors: Lau, Wai Shing 
Qian, Peng Wei
Zhao, Rong
Issue Date: 1997
Source: Lau, Wai Shing,Qian, Peng Wei,Zhao, Rong (1997). New mechanism of leakage current in ultra-shallow junctions with TiSi2 contacts. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 207-212. ScholarBank@NUS Repository.
Abstract: For shallow n+/p and p+/n junctions with TiSi2 contacts, the leakage current quite frequently increases after silicidation. When the Ti layer for silicidation is thick, the leakage current of shallow p+/n junctions increases much more strongly than shallow n+/p junctions after silicidation. This is usually explained by Si consumption due to silicidation. When the Ti layer for silicidation is thin, the leakage current of shallow n+/p junctions increases more strongly than shallow p+/n junctions after silicidation. In this paper, a new mechanism of Ti+ drift due to the built-in electric field is proposed to explain the larger leakage current of shallow n+/p junctions than that of shallow p+/n junctions after silicidation. A numerical simulation with the pc-1d software package was performed to calculate the electric field distribution for shallow junctions under various conditions.
Source Title: Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/81589
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