Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs - characterization and model development

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81526

Title:	Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs - characterization and model development
Authors:	Rao, Rapeta V.V.V.J. Chong, T.C. Tan, L.S. Lau, W.S. Liou, J.J.
Issue Date:	1999
Citation:	Rao, Rapeta V.V.V.J.,Chong, T.C.,Tan, L.S.,Lau, W.S.,Liou, J.J. (1999). Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs - characterization and model development. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO : 43-52. ScholarBank@NUS Repository.
Abstract:	GaAs and Al0.3Ga0.7As, grown at 280°C by molecular beam epitaxy (MBE) and in situ annealed at 600°C for 10 minutes, had been employed as gate insulators in GaAs based field effect transistors and their properties analyzed. Low frequency noise studies on TLM structures of MISFETs were carried out to evaluate the performance of MISFETs. Insulator thickness dependency on the performance of MISFETs was observed. Noise performance was improved as the thickness of the insulator was reduced. Off-state breakdown characteristics of MISFET devices indicated a little change in the gate-drain breakdown characteristics of MISFETs. An analytical model had been developed to predict the DC and RF performance of the MISFET devices.
Source Title:	Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
URI:	http://scholarbank.nus.edu.sg/handle/10635/81526
Appears in Collections:	Staff Publications

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