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|Title:||Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs - characterization and model development|
|Authors:||Rao, Rapeta V.V.V.J. |
|Source:||Rao, Rapeta V.V.V.J.,Chong, T.C.,Tan, L.S.,Lau, W.S.,Liou, J.J. (1999). Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs - characterization and model development. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO : 43-52. ScholarBank@NUS Repository.|
|Abstract:||GaAs and Al0.3Ga0.7As, grown at 280°C by molecular beam epitaxy (MBE) and in situ annealed at 600°C for 10 minutes, had been employed as gate insulators in GaAs based field effect transistors and their properties analyzed. Low frequency noise studies on TLM structures of MISFETs were carried out to evaluate the performance of MISFETs. Insulator thickness dependency on the performance of MISFETs was observed. Noise performance was improved as the thickness of the insulator was reduced. Off-state breakdown characteristics of MISFET devices indicated a little change in the gate-drain breakdown characteristics of MISFETs. An analytical model had been developed to predict the DC and RF performance of the MISFET devices.|
|Source Title:||Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO|
|Appears in Collections:||Staff Publications|
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