Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81472
Title: Improved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells cladding
Authors: Teng, J.H.
Chua, S.J. 
Liu, W.
Wang, X.C.
Choi, H.W.
Dong, J.R.
Li, G.
Braddoc, D.
Issue Date: 2000
Source: Teng, J.H.,Chua, S.J.,Liu, W.,Wang, X.C.,Choi, H.W.,Dong, J.R.,Li, G.,Braddoc, D. (2000). Improved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells cladding. Materials Research Society Symposium - Proceedings 618 : 213-218. ScholarBank@NUS Repository.
Abstract: A GaAs/AlGaAs laser structure with multi-quantum-well cladding layer has been employed to investigate the group III interdiffusion. With this structure the photoluminescence (PL) signals from both the top C doped cladding layers and the laser active region quantum wells can be observed simultaneously. In contrast to the depth dependence of the group III vacancy enhanced interdiffusion, the quantum wells in the thick top cladding layer showed a uniform layer intermixing and the extent of intermixing was less than that observed in the quantum wells of the laser active region. The Al-Ga interdiffusion coefficient, DAl-Ga, of the cladding layer is about 4 times less than that of the active region. A more efficient carrier transport from the cladding layer to the active region in the intermixed sample was deduced from the temperature varied PL spectra. The built-in electric field is proposed to enhance the vacancy diffusion in the active region.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/81472
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

30
checked on Feb 22, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.