Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81460
Title: Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation
Authors: Pan, Y. 
Issue Date: 1993
Source: Pan, Y. (1993). Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation. Annual Proceedings - Reliability Physics (Symposium) : 43-47. ScholarBank@NUS Repository.
Abstract: The hot-carrier induced degradation mechanisms of LDD p-MOSFET's have been investigated. Gate oxide layers were grown in a wet ambient at 850°C, which was reported as an advantageous candidate for a 0.8μm process. Degradation of the saturation drain current proceeds logarithmically in stress time while that of the linear current saturates. In addition to the trapping of electrons in gate oxide layers, donor-like interface states were generated by the hot carrier injection. The presence of the interface states was verified by measuring the degradation of the linear current and the threshold voltage after trapped electrons in the gate oxide are fully released. The interface state densities were estimated by fitting the calculated drain current degradation to the measured one by using two dimensional process and device simulators.
Source Title: Annual Proceedings - Reliability Physics (Symposium)
URI: http://scholarbank.nus.edu.sg/handle/10635/81460
ISBN: 0780307828
ISSN: 00999512
Appears in Collections:Staff Publications

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