Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/81458
DC Field | Value | |
---|---|---|
dc.title | Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements | |
dc.contributor.author | Goh, Y.H. | |
dc.contributor.author | Ling, C.H. | |
dc.date.accessioned | 2014-10-07T03:08:32Z | |
dc.date.available | 2014-10-07T03:08:32Z | |
dc.date.issued | 1997 | |
dc.identifier.citation | Goh, Y.H.,Ling, C.H. (1997). Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 23-27. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81458 | |
dc.description.abstract | The forward gated-diode drain current characterized at low drain voltages and charge pumping current measurements are applied to pMOSFET's for investigating hot-carrier induced defects in the device. A linear relationship between the post-stress forward gated-diode drain current peaks and the corresponding charge pumping current peaks is obtained. Trapping of negative charge and generation of interface traps alter stress may be deduced from the gated-diode drain current characteristics. Logarithmic time degradation is observed from measurement of the increase in the forward gated-diode drain current peaks after stress. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE | |
dc.description.page | 23-27 | |
dc.description.coden | 267 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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