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|Title:||Formation of In-rich regions at the perphery of the inverted hexagonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy|
|Citation:||Li, P.,Chua, S.J.,Hao, M.,Wang, W.,Zhang, X.,Sugahara, T.,Sakai, S. (2000). Formation of In-rich regions at the perphery of the inverted hexagonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy. Materials Research Society Symposium - Proceedings 595 : W11.31.1 - W11.31.6. ScholarBank@NUS Repository.|
|Abstract:||InGaN thin films were grown by low-pressure metalorganic-vapor-phase-epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surfaces. Room temperature CL at the wavelengths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In-rich regions formed at the periphery of the hexagonal pits.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
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