Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81409
Title: Electronic band-structure of Mg1-xZnxSySe1-y semiconductor alloy
Authors: Teo, K.L. 
Feng, Y.P. 
Li, M.F. 
Chong, T.C. 
Issue Date: 1994
Source: Teo, K.L.,Feng, Y.P.,Li, M.F.,Chong, T.C. (1994). Electronic band-structure of Mg1-xZnxSySe1-y semiconductor alloy. Materials Research Society Symposium Proceedings 326 : 139-144. ScholarBank@NUS Repository.
Abstract: II-VI semiconductor alloys have recently received considerable attention for their possible use in double heterostructure (DII) blue laser diodes (LDs)1-4. The purpose of this paper is to present the empirical pseudopotential method within virtual crystal approximation for calculating the band structure of MgZnSSe quaternary alloy. The dependence of band gap energies on alloy composition had shown that MgZnSSe can be a direct or an indirect semiconductor. Electron and hole effective masses are calculated for different composition. Camel's back structure for the X valley conduction band has been found for certain composition range.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/81409
ISBN: 1558992251
ISSN: 02729172
Appears in Collections:Staff Publications

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