Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81404
Title: Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single device
Authors: Lou, C.L.
Tan, C.B.
Chim, W.K. 
Chan, D.S.H. 
Issue Date: 1997
Citation: Lou, C.L.,Tan, C.B.,Chim, W.K.,Chan, D.S.H. (1997). Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single device. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 140-145. ScholarBank@NUS Repository.
Abstract: We present a new measurement technique - the drain current-conductance method (DCCM) to extract the gate-bias dependent effective channel mobility (μeff) and series resistances (Rs and Rd) of drain-engineered MOSFETs. Experimental verification for devices with differing channel lengths and after hot-carrier stresses showed that this technique is accurate and effective. The parameters extracted has provided further insight into the asymmetries of graded junctions, and the damage mechanisms of hot-carrier degraded MOSFETs.
Source Title: Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/81404
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