Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81394
Title: Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's
Authors: Goh, Y.H.
Ah, L.K.
Ling, C.H. 
Issue Date: 1997
Source: Goh, Y.H.,Ah, L.K.,Ling, C.H. (1997). Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's. Proceedings of the International Conference on Microelectronics 2 : 659-662. ScholarBank@NUS Repository.
Abstract: Hot-carrier degradation in n- and p-MOSFET's is investigated using the forward gated-diode drain current and charge pumping current measurements. A linear relation is experimentally found between the maximum forward gated-diode current Idf and the corresponding maximum charge pumping current Icp in the devices after hot-carrier stress. A close correspondence between the two currents is demonstrated.
Source Title: Proceedings of the International Conference on Microelectronics
URI: http://scholarbank.nus.edu.sg/handle/10635/81394
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