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|Title:||Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's|
|Source:||Goh, Y.H.,Ah, L.K.,Ling, C.H. (1997). Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's. Proceedings of the International Conference on Microelectronics 2 : 659-662. ScholarBank@NUS Repository.|
|Abstract:||Hot-carrier degradation in n- and p-MOSFET's is investigated using the forward gated-diode drain current and charge pumping current measurements. A linear relation is experimentally found between the maximum forward gated-diode current Idf and the corresponding maximum charge pumping current Icp in the devices after hot-carrier stress. A close correspondence between the two currents is demonstrated.|
|Source Title:||Proceedings of the International Conference on Microelectronics|
|Appears in Collections:||Staff Publications|
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