Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81393
Title: Correlation between gate induced drain leakage and plasma induced interface traps
Authors: Siguang, M.
Yaohui, Z.
Li, M.F. 
Li, W.
Wang, J.L.F.
Yen, A.C.
Sheng, G.T.T.
Issue Date: 2000
Source: Siguang, M.,Yaohui, Z.,Li, M.F.,Li, W.,Wang, J.L.F.,Yen, A.C.,Sheng, G.T.T. (2000). Correlation between gate induced drain leakage and plasma induced interface traps. Materials Research Society Symposium - Proceedings 592 : 117-122. ScholarBank@NUS Repository.
Abstract: In this paper we carefully investigate the correlation between gate induced drain leakage current and plasma induced damages in the deep submicron p+ polysilicon gate pMOSFETs with gate oxide thickness of 50 angstroms. Low field enhancement of gate induced drain leakage current caused by plasma charging damage is a function of metal 1 antenna area/length ratio and cell location. Combined with the charge pumping measurements, it is found that gate induced drain leakage current enhancement is mainly due to the plasma induced interface traps. A linear relationship between the gate induced drain leakage and the plasma induced interface trap density is observed within the experimental error. On the other hand, the threshold voltage measurements show that oxide trapped charge has no major contribution to, and no correlation with, the gate induced drain leakage current for thin gate oxide MOSFET devices.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/81393
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

31
checked on Feb 22, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.