Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81390
Title: Comparative study on the channel hot-carrier degradation of N- and P-MOSFETs with CVD tungsten polycide gate
Authors: Low, C.L.
Chim, W.K. 
Chan, D.S.H. 
Pan, Y. 
Issue Date: 1995
Source: Low, C.L.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1995). Comparative study on the channel hot-carrier degradation of N- and P-MOSFETs with CVD tungsten polycide gate. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 102-105. ScholarBank@NUS Repository.
Abstract: The channel hot-carrier induced degradation of polysilicon (PolySi) and tungsten polycide (WSix) gate nMOSFETs and pMOSFETs are studied using the charge-pumping (CP) technique. WSix nMOSFETs under maximum substrate current (Isub,max) stress (Vg ≈ Vd/2) are degraded to a smaller extent when compared to the PolySi nMOSFETs. From the CP measurements, it is confirmed that fewer interface traps (Nit) are generated for the WSix devices. However, under maximum gate current (Ig,max) stress (Vg = Vd), the WSix nMOSFETs showed higher degradation than the PolySi devices. In contrast, WSix pMOSFETs showed higher degradation when compared to the PolySi devices under both the Ig,max and Isub,max stresses. The CP results showed that more Nit and Nox (negative oxide trapped charges) are present in the WSix pMOSFETs when compared with the PolySi devices. Finally, the operation of WSix CMOS transistors is found to be limited by the hot-carrier lifetime of WSix pMOSFETs.
Source Title: Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/81390
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