Please use this identifier to cite or link to this item:
|Title:||Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETs|
|Source:||Lou, C.L.,Song, J.,Tan, C.B.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1997). Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETs. International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings : 102-104. ScholarBank@NUS Repository.|
|Abstract:||The effective mobility of NMOSFETs with different plasma damage is characterized by a new technique. The applicability of this technique is verified. The effective mobility is observed to be more sensitive than the maximum linear transconductance as a measure of the quality of the Si-SiO2 interface.|
|Source Title:||International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 23, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.