Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81388
Title: Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETs
Authors: Lou, C.L.
Song, J.
Tan, C.B.
Chim, W.K. 
Chan, D.S.H. 
Pan, Y. 
Issue Date: 1997
Source: Lou, C.L.,Song, J.,Tan, C.B.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1997). Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETs. International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings : 102-104. ScholarBank@NUS Repository.
Abstract: The effective mobility of NMOSFETs with different plasma damage is characterized by a new technique. The applicability of this technique is verified. The effective mobility is observed to be more sensitive than the maximum linear transconductance as a measure of the quality of the Si-SiO2 interface.
Source Title: International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/81388
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