Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/81386
DC Field | Value | |
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dc.title | Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique | |
dc.contributor.author | Leang, S.E. | |
dc.contributor.author | Chan, D.S.H. | |
dc.contributor.author | Chim, W.K. | |
dc.date.accessioned | 2014-10-07T03:07:45Z | |
dc.date.available | 2014-10-07T03:07:45Z | |
dc.date.issued | 1995 | |
dc.identifier.citation | Leang, S.E.,Chan, D.S.H.,Chim, W.K. (1995). Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 96-101. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81386 | |
dc.description.abstract | With the continual miniaturization of MOS devices, hot-carrier degradation has become a major reliability issue. Several techniques have been developed to characterize the hot-carrier degradation in MOSFETs. Of these, the gate-current measurement and charge-pumping techniques have shown to be particularly attractive. However, only the gate-current measurement technique can be used on non-isolated, practical devices. A new gate-current measurement technique is developed, which requires a much shorter time to obtain the Ig-Vg characteristic curves of MOSFETs as compared to the conventional floating gate technique. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA | |
dc.description.page | 96-101 | |
dc.description.coden | 234 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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