Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81386
Title: Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique
Authors: Leang, S.E.
Chan, D.S.H. 
Chim, W.K. 
Issue Date: 1995
Source: Leang, S.E.,Chan, D.S.H.,Chim, W.K. (1995). Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 96-101. ScholarBank@NUS Repository.
Abstract: With the continual miniaturization of MOS devices, hot-carrier degradation has become a major reliability issue. Several techniques have been developed to characterize the hot-carrier degradation in MOSFETs. Of these, the gate-current measurement and charge-pumping techniques have shown to be particularly attractive. However, only the gate-current measurement technique can be used on non-isolated, practical devices. A new gate-current measurement technique is developed, which requires a much shorter time to obtain the Ig-Vg characteristic curves of MOSFETs as compared to the conventional floating gate technique.
Source Title: Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/81386
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