Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.405380
Title: Application of excimer laser annealing in the formation of ultra-shallow p+/n junctions
Authors: Chong, Y.F.
Pey, K.L. 
Wee, A.T.S. 
See, A. 
Tung, C.-H. 
Gopalakrishnan, R. 
Lu, Y.F. 
Keywords: Excimer laser annealing
Rapid thermal annealing
Ultra-low energy ion implantation
Ultra-shallow junction
Issue Date: 2000
Citation: Chong, Y.F., Pey, K.L., Wee, A.T.S., See, A., Tung, C.-H., Gopalakrishnan, R., Lu, Y.F. (2000). Application of excimer laser annealing in the formation of ultra-shallow p+/n junctions. Proceedings of SPIE - The International Society for Optical Engineering 4227 : 124-132. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405380
Abstract: In this study, we have simulated the melt front and temperature distribution profiles for pre-amorphized Si during laser irradiation. The simulation data show that theoretically, it is possible to melt the whole amorphous layer without melting the underlying crystalline substrate. On the other hand, ultra-shallow p+/n junctions were formed by ultra-low energy boron ion implantation into pre-amorphized silicon substrates. Dopant activation was achieved via spike rapid thermal annealing (RTA) and pulsed excimer laser annealing. Secondary ion mass spectrometry (SIMS) analyses show that a step-like dopant profile can be obtained with a single-pulse laser irradiation. Such a profile is in sharp contrast with the boron concentration profile that is obtained after spike RTA. The cross-sectional transmission electron microscopy images show that the entire pre-amorphized layer has been recrystallized to single-crystalline (100) Si after laser annealing. The results clearly indicate the advantages of employing laser anneal as compared to RTA in the fabrication of highly activated and abrupt ultra-shallow junctions.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/81379
ISSN: 0277786X
DOI: 10.1117/12.405380
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on Aug 11, 2018

WEB OF SCIENCETM
Citations

3
checked on Jul 25, 2018

Page view(s)

53
checked on Aug 10, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.