Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1798191
Title: Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
Authors: Ho, C.S.
Pey, K.L.
Tung, C.H.
Zhang, B.C.
Tee, K.C.
Karunasiri, G. 
Chua, S.J. 
Issue Date: 2004
Citation: Ho, C.S., Pey, K.L., Tung, C.H., Zhang, B.C., Tee, K.C., Karunasiri, G., Chua, S.J. (2004). Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction. Electrochemical and Solid-State Letters 7 (11) : H49-H51. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1798191
Abstract: Void free epitaxial-CoSi 2 with nano-thickness has been successfully fabricated on narrow Si(lOO) substrates surrounded by shallow trench isolation (STI) using a capped titanium mediated epitaxy method. The suicide is epitaxial with a CoSi 2(110)IISi( 100) crystal orientation. Void growth in the narrow silicon lines under the film edges due to an anomalous creep effect in the presence of a localized tensile stress between CoSi 2 and Si was suppressed completely by optimizing the initial rapid thermal annealing (RTA) thermal budget, and ensuring that no voids nucleated prior to the selective wet clean and second higher-temperature RTA process. The epitaxial Co-silicided n/p metal oxide semiconductor field effect transistors show excellent device performance. © 2004 The Electrochemical Society, All rights reserved.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81331
ISSN: 10990062
DOI: 10.1149/1.1798191
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

38
checked on Apr 20, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.