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|Title:||Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction|
|Citation:||Ho, C.S., Pey, K.L., Tung, C.H., Zhang, B.C., Tee, K.C., Karunasiri, G., Chua, S.J. (2004). Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction. Electrochemical and Solid-State Letters 7 (11) : H49-H51. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1798191|
|Abstract:||Void free epitaxial-CoSi 2 with nano-thickness has been successfully fabricated on narrow Si(lOO) substrates surrounded by shallow trench isolation (STI) using a capped titanium mediated epitaxy method. The suicide is epitaxial with a CoSi 2(110)IISi( 100) crystal orientation. Void growth in the narrow silicon lines under the film edges due to an anomalous creep effect in the presence of a localized tensile stress between CoSi 2 and Si was suppressed completely by optimizing the initial rapid thermal annealing (RTA) thermal budget, and ensuring that no voids nucleated prior to the selective wet clean and second higher-temperature RTA process. The epitaxial Co-silicided n/p metal oxide semiconductor field effect transistors show excellent device performance. © 2004 The Electrochemical Society, All rights reserved.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
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