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|Title:||Two-electron state and negative-U property of sulfur DX centers in GaAs1-xPx|
|Authors:||Li, M.F. |
|Citation:||Li, M.F., Luo, Y.Y., Yu, P.Y., Weber, E.R., Fujioka, H., Du, A.Y., Chua, S.J., Lim, Y.T. (1994). Two-electron state and negative-U property of sulfur DX centers in GaAs1-xPx. Physical Review B 50 (11) : 7996-7999. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.50.7996|
|Abstract:||A new way to study the two-electron state in DX centers at atmospheric pressure is reported. It is based on the idea of codoping a GaAs0.6P0.4 sample with a uniform background of Te shallow donors (as source of free carriers) and a Gaussian distribution of sulfur DX centers by ion implantation. Using both capacitance-voltage profiling and deep-level transient spectroscopy measurements, we demonstrate that the ground state of the sulfur DX center traps two electrons and therefore has negative U. © 1994 The American Physical Society.|
|Source Title:||Physical Review B|
|Appears in Collections:||Staff Publications|
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