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|Title:||Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiation|
|Authors:||Ling, C.H. |
Chemical vapour deposition
|Citation:||Ling, C.H.,Cheng, Z.Y. (1997-01-02). Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiation. Electronics Letters 33 (1) : 104-105. ScholarBank@NUS Repository.|
|Abstract:||Charge generation in CVD SiO2 on Si substrate, subjected to 253.7nm ultraviolet irradiation, is observed from variation in the effective minority carrier lifetime in Si. The carrier lifetime exhibits a minimum, a maximum, and a second minimum, before saturation. This is consistent with changes in the silicon surface potential which controls surface recombination, as injected electrons are captured by generated SiO2 traps.|
|Source Title:||Electronics Letters|
|Appears in Collections:||Staff Publications|
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