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|Title:||Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes|
|Authors:||Rao, R.V.V.V.J. |
|Citation:||Rao, R.V.V.V.J.,Chong, T.C.,Tan, L.S.,Lau, W.S.,Lim, N. (1999-09). Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes. International Journal of Electronics 86 (9) : 1039-1050. ScholarBank@NUS Repository.|
|Abstract:||Low temperature (LT)-grown GaAs and Al0.3Ga0.7 As metal-insulator-n+-GaAs (MIN) diodes have been fabricated and their electrical properties analyzed. Studies were carried out to evaluate the interfacial quality of the LT layer and the underlying n+-GaAs layer using transient current spectroscopy (TCS) and capacitance-frequency (C-f) characterization. TCS studies on LT-GaAs revealed a high concentration of a continuum of states and a dominant electron trap with an activation energy of 0.52 eV. In LT-Al0.3Ga0.7As, a shallow trap at 0.36 eV and two deep level traps at 0.85 eV and 1.12 eV were observed. Frequency dispersion was observed to be less for LT-GaAs samples with an AlAs barrier layer than without an AlAs barrier layer. However, LT-Al0.3Ga0.7As MIN diodes displayed a smaller frequency dispersion than LT-GaAs MIN diodes. Upon further investigation into MISFET devices, it was found that LT-Al0.3Ga0.7As MISFET devices had better transconductance frequency dispersion characteristics than LT-GaAs MISFET devices did.|
|Source Title:||International Journal of Electronics|
|Appears in Collections:||Staff Publications|
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