Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81266
Title: Theoretical analysis of bound-to-continum state infrared absorption in GaAs/AlxGa1-x as quantum wall structures
Authors: Rusli
Tow Chong, Chong 
Soo Jin, Chua 
Issue Date: May-1993
Citation: Rusli, Tow Chong, Chong, Soo Jin, Chua (1993-05). Theoretical analysis of bound-to-continum state infrared absorption in GaAs/AlxGa1-x as quantum wall structures. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 32 (5 S) : 1998-2004. ScholarBank@NUS Repository.
Abstract: This paper presents the first detailed analysis of bound-to-continuum state infrared optical transitions in doped GaAs/AlxGa1-x as quantum well structure taking into account the energy-dependent intra-sub-band relaxation time. Effects of the quantum well structural parameters on the absorption coefficient are studied so as to provide a basic understanding of how optimal device performance can be achieved by the proper choice of parameters. Theoretical calculations show that absorption peak wavelength and bandwidth are strongly dependant on the well width and barrier height, in agreement with reported experimental results. Therefore, with variation in the structural parameters, the absorption bandwidth can be turned over a large range.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/81266
ISSN: 00214922
Appears in Collections:Staff Publications

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