Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.753708
Title: The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFET's
Authors: Ang, D.S. 
Ling, C.H. 
Keywords: Electron traps
Hot-electron injection
Interface traps
MOSFET's
Post-stress effect
Si-SiO2 interface
Issue Date: 1999
Citation: Ang, D.S., Ling, C.H. (1999). The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFET's. IEEE Transactions on Electron Devices 46 (4) : 738-746. ScholarBank@NUS Repository. https://doi.org/10.1109/16.753708
Abstract: The generation of interface traps in p-MOSFET's subjected to hot-electron injection is found to proceed even after the stress has been terminated. The extent of post-stress interface trap generation is strongly dependent on the magnitude of the preceding hot-electron stress, as well as the magnitude and polarity of the gate voltage during relaxation. Trap generation is enhanced for negative gate voltage anneal, but suppressed for positive gate voltage anneal. For a given stress-induced damage, the corresponding trap generation kinetics can be completely described by a single characteristic, which is shifted in time according to the magnitude of the applied gate voltage. Existing interface trap generation models are discussed in the light of the experimental results. A new model involving the tunneling of holes from the inversion layer to deep-level electron traps is proposed. Similar post-stress effect observed for hot-electron stressed n-MOSFET's provides additional support for the model. Our work suggests that near-interface electron traps, apart from the well-known hole traps, may also significantly affect the longterm stability of the Si-SiO2 interface. © 1999 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/81259
ISSN: 00189383
DOI: 10.1109/16.753708
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

6
checked on Jul 21, 2018

WEB OF SCIENCETM
Citations

3
checked on Jun 12, 2018

Page view(s)

35
checked on Jun 8, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.