Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.351381
Title: The preparation and characterization of nearly hysteresis-free metal-nitride-silicon capacitors on both p- and n-type silicon substrates
Authors: Lau, W.S. 
Issue Date: 1992
Citation: Lau, W.S. (1992). The preparation and characterization of nearly hysteresis-free metal-nitride-silicon capacitors on both p- and n-type silicon substrates. Journal of Applied Physics 71 (1) : 489-493. ScholarBank@NUS Repository. https://doi.org/10.1063/1.351381
Abstract: The hysteresis in metal-nitride-silicon (MNS) capacitors can be reduced to nearly zero by using nitrogen-rich silicon nitride as the gate dielectric and treating the silicon substrate by an ammonia plasma before dielectric deposition. However, the ammonia plasma treatment step also causes an increase in interface state density, especially in the middle of the silicon band gap. Without the ammonia plasma treatment, the virgin flat-band voltage V * FB is always negative. With the ammonia plasma treatment, V* FB can be shifted from a negative value to zero for MNS capacitors on n-type silicon, whereas V* FB will be shifted from a negative value to a more negative value for MNS capacitors on p-type silicon. These effects can be explained by postulating that the interface states generated by the ammonia plasma treatment step are amphoteric defects similar to Pb centers at the oxide/silicon interface in metal-oxide-silicon capacitors.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/81256
ISSN: 00218979
DOI: 10.1063/1.351381
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