Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81248
Title: The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs
Authors: Lau, W.S. 
Chor, E.F. 
Kek, S.P.
Abdul Aziz, W.H.B.
Lim, H.C.
Heng, C.H. 
Zhao, R.
Keywords: AlGaAs
GaAs
Heterojunction bipolar transistor (HBT)
I2
Iodide
Iodine
KI
ph
Selective etching
Selectivity
Triiodide
Issue Date: Jun-1997
Citation: Lau, W.S.,Chor, E.F.,Kek, S.P.,Abdul Aziz, W.H.B.,Lim, H.C.,Heng, C.H.,Zhao, R. (1997-06). The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (6 A) : 3770-3774. ScholarBank@NUS Repository.
Abstract: The selective etching of n-Al0.3Ga0.7As with respect to p+-GaAs is useful for the fabrication of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). The KI/I2/H2O/H2SO4 etching solution was found to be superior to the KI/I2/H2 O solution in terms of selectivity. The selectivity could be furthered improved by aging the etching solution for 3 days and by lowering the temperature from room temperature to the ice point. The best selectivity achieved was 330 with etch rates of 0.165 μm/min and 0.0005 μm/min for Al0.3Ga0.7As and GaAs respectively for a stabilized KI/I2/H2O/H2SO4 at an etching temperature of 3° C.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/81248
ISSN: 00214922
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

180
checked on Oct 19, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.