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|Title:||The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs|
|Authors:||Lau, W.S. |
Abdul Aziz, W.H.B.
Heterojunction bipolar transistor (HBT)
|Citation:||Lau, W.S.,Chor, E.F.,Kek, S.P.,Abdul Aziz, W.H.B.,Lim, H.C.,Heng, C.H.,Zhao, R. (1997-06). The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (6 A) : 3770-3774. ScholarBank@NUS Repository.|
|Abstract:||The selective etching of n-Al0.3Ga0.7As with respect to p+-GaAs is useful for the fabrication of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). The KI/I2/H2O/H2SO4 etching solution was found to be superior to the KI/I2/H2 O solution in terms of selectivity. The selectivity could be furthered improved by aging the etching solution for 3 days and by lowering the temperature from room temperature to the ice point. The best selectivity achieved was 330 with etch rates of 0.165 μm/min and 0.0005 μm/min for Al0.3Ga0.7As and GaAs respectively for a stabilized KI/I2/H2O/H2SO4 at an etching temperature of 3° C.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Appears in Collections:||Staff Publications|
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