Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81242
Title: Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures
Authors: Chua, S.J. 
Tang, X.H.
Xu, S.J. 
Keywords: A. Semiconductor
D. Optical properties
E. Luminescence
Issue Date: Jun-1997
Source: Chua, S.J.,Tang, X.H.,Xu, S.J. (1997-06). Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures. Solid State Communications 102 (10) : 739-742. ScholarBank@NUS Repository.
Abstract: Competing emissions arising from e-h recombinations within the same layer (spatial-direct) and across layers (spatial-indirect) in AlxGa1-xAs n-i-p-i doping structures have been studied using photoluminescence (PL). The emission from spatial-indirect transitions dominate at low temperatures (
Source Title: Solid State Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/81242
ISSN: 00381098
Appears in Collections:Staff Publications

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