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|Title:||Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix|
|Authors:||Jie, Y.X. |
|Citation:||Jie, Y.X.,Wu, X.,Huan, C.H.A.,Wee, A.T.S.,Guo, Y.,Zhang, T.J.,Pan, J.S.,Chai, J.,Chua, S.J. (1999). Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix. Surface and Interface Analysis 28 (1) : 195-199. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-L|
|Abstract:||Germanium nanocrystals immersed in amorphous SiOx matrix have been synthesized by r.f. co-sputter deposition of Ge and quartz with post-growth annealing at 600-900 °C. The structures of the Ge nanocrystals and SiOx matrix have been studied with x-ray diffraction, high-resolution transmission electron microscopy and XPS depth profiling. Broad-band photoluminescence spectra have been observed from samples annealed at temperatures higher than 600 °C. Possible photoluminescence mechanisms have also been discussed.|
|Source Title:||Surface and Interface Analysis|
|Appears in Collections:||Staff Publications|
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