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|Title:||Study of rf-sputtered yttrium oxide films on silicon by capacitance measurements|
|Authors:||Ling, C.H. |
|Citation:||Ling, C.H., Bhaskaran, J., Choi, W.K., Ah, L.K. (1995). Study of rf-sputtered yttrium oxide films on silicon by capacitance measurements. Journal of Applied Physics 77 (12) : 6350-6353. ScholarBank@NUS Repository. https://doi.org/10.1063/1.359588|
|Abstract:||Yttrium oxide Y2O3 films are prepared by rf sputtering on to silicon substrates and characterized by current-voltage I-V, capacitance-voltage C-V and capacitance-time C-t measurements. Relative permittivity increases with substrate heating from room temperature to 600 °C. As-deposited films show large flat-band voltage and interface trap density, which improve upon annealing in oxygen or hydrogen ambient up to 600 °C. However, film resistivity degrades by about 1 order of magnitude. Large hysteresis is observed in the C-V curves, particularly for films deposited at high substrate temperature. This observation is attributed to the interfacial polarization at the Y2O3/SiO2 (native) interface. By monitoring the device capacitance over time for a given applied voltage, the resultant curves can be fitted to an exponential time dependent relation: C(t)=α0-α1exp(-t/τ). The time constant is further found to exhibit a dependence on the applied voltage of the form τ=τ0exp(-V0/V). Comparison with electron-beam deposited films is also made. © 1995 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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