Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81227
Title: Structural study of plasma enhanced chemical vapour deposited silicon carbide films
Authors: Choi, W.K. 
Gangadharan, S.
Keywords: Annealing
Chemical vapour
Vapour deposited
Issue Date: 1-Jun-2000
Source: Choi, W.K.,Gangadharan, S. (2000-06-01). Structural study of plasma enhanced chemical vapour deposited silicon carbide films. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 75 (2-3) : 174-176. ScholarBank@NUS Repository.
Abstract: The effect of the molar gas ratio (X = C2H2/(C2H2 + SiH4)) and rf power on the structural properties of plasma enhanced chemical vapour deposited hydrogenated amorphous silicon carbide films has been investigated. The deposition rate was found to increase as either X or rf power increases. The value of n reduces as either X or the rf power increases. It was concluded that high carbon concentration increases the disorder in the film and increases the gap value. The IR results show Si-C bond increases with an increase in rf power or a decrease in X. The value of Si-H bond decreases and C-H bond increases with increases in X. Annealing increases the Si-C bond but reduces the Si-H and C-H bonds. © 2000 Elsevier Science S.A. All rights reserved.
Source Title: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/81227
ISSN: 09215107
Appears in Collections:Staff Publications

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