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|Title:||Structural study of plasma enhanced chemical vapour deposited silicon carbide films|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K.,Gangadharan, S. (2000-06-01). Structural study of plasma enhanced chemical vapour deposited silicon carbide films. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 75 (2-3) : 174-176. ScholarBank@NUS Repository.|
|Abstract:||The effect of the molar gas ratio (X = C2H2/(C2H2 + SiH4)) and rf power on the structural properties of plasma enhanced chemical vapour deposited hydrogenated amorphous silicon carbide films has been investigated. The deposition rate was found to increase as either X or rf power increases. The value of n reduces as either X or the rf power increases. It was concluded that high carbon concentration increases the disorder in the film and increases the gap value. The IR results show Si-C bond increases with an increase in rf power or a decrease in X. The value of Si-H bond decreases and C-H bond increases with increases in X. Annealing increases the Si-C bond but reduces the Si-H and C-H bonds. © 2000 Elsevier Science S.A. All rights reserved.|
|Source Title:||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Appears in Collections:||Staff Publications|
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