Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81224
Title: Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition
Authors: Choi, W.K. 
Chen, J.H. 
Bera, L.K. 
Feng, W.
Pey, K.L. 
Mi, J.
Yang, C.Y.
Ramam, A. 
Chua, S.J. 
Pan, J.S. 
Wee, A.T.S. 
Liu, R. 
Issue Date: 1-Jan-2000
Source: Choi, W.K.,Chen, J.H.,Bera, L.K.,Feng, W.,Pey, K.L.,Mi, J.,Yang, C.Y.,Ramam, A.,Chua, S.J.,Pan, J.S.,Wee, A.T.S.,Liu, R. (2000-01-01). Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition. Journal of Applied Physics 87 (1) : 192-197. ScholarBank@NUS Repository.
Abstract: The structural properties of as-grown and rapid thermal oxidized Si1-x-yGexCy epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si1-x-yGexCy system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1-x-yGexCy film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1-xGex films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films. © 2000 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/81224
ISSN: 00218979
Appears in Collections:Staff Publications

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