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|Title:||Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K.,Chen, J.H.,Bera, L.K.,Feng, W.,Pey, K.L.,Mi, J.,Yang, C.Y.,Ramam, A.,Chua, S.J.,Pan, J.S.,Wee, A.T.S.,Liu, R. (2000-01-01). Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition. Journal of Applied Physics 87 (1) : 192-197. ScholarBank@NUS Repository.|
|Abstract:||The structural properties of as-grown and rapid thermal oxidized Si1-x-yGexCy epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si1-x-yGexCy system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1-x-yGexCy film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1-xGex films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films. © 2000 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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