Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81221
Title: Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
Authors: Lau, Wai Shing 
Chor, Eng Fong 
Foo, Chee Seng
Khoong, Wai Chee
Issue Date: 1-Aug-1992
Citation: Lau, Wai Shing,Chor, Eng Fong,Foo, Chee Seng,Khoong, Wai Chee (1992-08-01). Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities. Japanese Journal of Applied Physics, Part 2: Letters 31 (8 A) : L1021-L1023. ScholarBank@NUS Repository.
Abstract: Strong 1/fα (2 > α > 1) noise was observed in polysilicon emitter bipolar transistors with an interfacial oxide layer sandwiched between the polysilicon and monocrystalline silicon emitter regions but not in similar transistors without interfacial oxide. The noise was explained as fluctuations in the carrier tunneling probabilities through the interfacial oxide. A simple equivalent circuit was proposed to model the strong 1/fα noise.
Source Title: Japanese Journal of Applied Physics, Part 2: Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81221
ISSN: 00214922
Appears in Collections:Staff Publications

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