Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/29/5/039
Title: Spectroscopic observations of photon emissions in n-MOSFETs in the saturation region
Authors: Tao, J.M. 
Chan, D.S.H. 
Chim, W.K. 
Issue Date: 14-May-1996
Citation: Tao, J.M., Chan, D.S.H., Chim, W.K. (1996-05-14). Spectroscopic observations of photon emissions in n-MOSFETs in the saturation region. Journal of Physics D: Applied Physics 29 (5) : 1380-1385. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/29/5/039
Abstract: Direct spectrally resolved observations were made of the photon emissions n-channel MOSFETs biased in the saturation region. It was found that the total photon emission intensity measured in the range 1.45-2.75 eV is proportional to the substrate current and the correlation is independent of the bias condition, channel current and channel length. However, it was also found that the relationship between emission intensity at the low end of the range of energies varied with /0.7 sub whereas the emission intensity at the high end of the energy range varied with /1.5 sub. From these observations, it was concluded that Bremsstrahlung radiation of hot electrons in the Coulombic field is unlikely to be the dominant mechanism of photon emission in n-channel MOSFETs.
Source Title: Journal of Physics D: Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/81209
ISSN: 00223727
DOI: 10.1088/0022-3727/29/5/039
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

13
checked on Dec 11, 2018

WEB OF SCIENCETM
Citations

12
checked on Dec 11, 2018

Page view(s)

25
checked on Nov 2, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.