Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81192
Title: Six-parameter DC GaAs FET model for nonlinear circuit simulation
Authors: Cao, J.
Lin, F.
Kooi, P.S. 
Leong, M.S. 
Keywords: Field effect transistors
Gallium arsenide
Semiconductor device models
Issue Date: 9-Oct-1997
Source: Cao, J.,Lin, F.,Kooi, P.S.,Leong, M.S. (1997-10-09). Six-parameter DC GaAs FET model for nonlinear circuit simulation. Electronics Letters 33 (21) : 1825-1827. ScholarBank@NUS Repository.
Abstract: By emphasising the aspects of simplicity and accuracy for GaAs FET modelling, a six-parameter DC GaAs FET model is developed. Good agreement between simulated and measured data is obtained.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81192
ISSN: 00135194
Appears in Collections:Staff Publications

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