Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81185
Title: Single contact electron beam induced currents (scebic) in semiconductor junctions. Part I: Quantitative verification of scebic model
Authors: Kolachina, S.
Phang, J.C.H. 
Chan, D.S.H. 
Issue Date: Jun-1998
Source: Kolachina, S.,Phang, J.C.H.,Chan, D.S.H. (1998-06). Single contact electron beam induced currents (scebic) in semiconductor junctions. Part I: Quantitative verification of scebic model. Solid-State Electronics 42 (6) : 957-962. ScholarBank@NUS Repository.
Abstract: Single contact electron beam induced current (SCEBIC) transients have been obtained from a semiconductor junction for varying electron beam currents. The transients are shown to match a previously proposed model that postulates the existence of a parasitic capacitance between the unconnected junction region and the electrostatic ground. An experimental method to quantitatively verify the SCEBIC model and to extract relevant parameters is presented. The limitations of the model are discussed. © 1998 Elsevier Science Ltd. All rights reserved.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/81185
ISSN: 00381101
Appears in Collections:Staff Publications

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