Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81173
Title: Simulation of charge pumping current in hot-carrier degraded p-MOSFET's
Authors: Samudra, G.S. 
Yip, Anselm
See, L.K.
Issue Date: 1998
Source: Samudra, G.S.,Yip, Anselm,See, L.K. (1998). Simulation of charge pumping current in hot-carrier degraded p-MOSFET's. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 32-36. ScholarBank@NUS Repository.
Abstract: Charge pumping is a widely used method of evaluating the Si/SiO2 interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. Two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are also substantiated with the measurement results.
Source Title: IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
URI: http://scholarbank.nus.edu.sg/handle/10635/81173
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