Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81161
Title: SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
Authors: Ling, C.H. 
Kwok, C.Y.
Prasad, K.
Issue Date: Oct-1986
Source: Ling, C.H.,Kwok, C.Y.,Prasad, K. (1986-10). SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 25 (10) : 1490-1494. ScholarBank@NUS Repository.
Abstract: Experimental data are presented on the effects of varying deposition parameters of SiH//4/NH//3 gas flow ratio, rf power, deposition pressure and substrate temperature, on the deposition rate, refractive index, hydrogen content and etch rates of PECVD silicon nitride films. BHF etch rate in these films are generally high and this is shown to be associated with the high hydrogen content. N-H and Si-H bond concentrations are measured in the range 1-4 multiplied by 10**2**2 cm** minus **3. The substrate temperature dependence of the etch rate exhibits a maximum for films deposited at 150 degree C. The behaviour is attributed to the incorporation of both hydrogen and oxygen, the effects on the etch rate of which are suggested to act in opposing directions.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
URI: http://scholarbank.nus.edu.sg/handle/10635/81161
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

20
checked on Feb 18, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.