Please use this identifier to cite or link to this item:
https://doi.org/10.1109/16.223700
Title: | Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope |
Authors: | Chan, Daniel S.H. Pey, Kin Leong Phang, Jacob C.H. |
Issue Date: | Aug-1993 |
Source: | Chan, Daniel S.H., Pey, Kin Leong, Phang, Jacob C.H. (1993-08). Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope. IEEE Transactions on Electron Devices 40 (8) : 1417-1425. ScholarBank@NUS Repository. https://doi.org/10.1109/16.223700 |
Abstract: | Five semiconductor-related parameters have been extracted simultaneously from experimental data of cathodoluminescence output collected as a function of electron-beam energy. The extraction technique is based on a recently proposed three-dimensional computer model of cathodoluminescence. It also uses a curve fitting technique based on the minimization of an area error criterion. Computational results show that a unique and unambiguous set of parameter values can be obtained for each set of the experimental data points using the algorithm suggested. |
Source Title: | IEEE Transactions on Electron Devices |
URI: | http://scholarbank.nus.edu.sg/handle/10635/81149 |
ISSN: | 00189383 |
DOI: | 10.1109/16.223700 |
Appears in Collections: | Staff Publications |
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