Please use this identifier to cite or link to this item:
|Title:||Role of hole fluence in gate oxide breakdown|
|Authors:||Li, M.F. |
|Citation:||Li, M.F., He, Y.D., Ma, S.G., Cho, B.-J., Lo, K.F., Xu, M.Z. (1999-11). Role of hole fluence in gate oxide breakdown. IEEE Electron Device Letters 20 (11) : 586-588. ScholarBank@NUS Repository. https://doi.org/10.1109/55.798052|
|Abstract:||A simple model which links the primary hole and Fowler-Nordheim (FN) electron injections to oxide breakdown is established and the calculation based on this model is in good agreement with our experiments. When the sum of the active trap density Dpri due to primary hole injection and the active trap density Dn due to FN electron injection reaches a critical value Dcri, the oxide breaks down. The hole is two orders of magnitude more effective than FN electron in causing breakdown. These new findings are imperative in predicting oxide reliability and device lifetime.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 12, 2018
WEB OF SCIENCETM
checked on Oct 17, 2018
checked on Sep 28, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.