Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.798052
Title: Role of hole fluence in gate oxide breakdown
Authors: Li, M.F. 
He, Y.D. 
Ma, S.G.
Cho, B.-J. 
Lo, K.F.
Xu, M.Z.
Issue Date: Nov-1999
Source: Li, M.F., He, Y.D., Ma, S.G., Cho, B.-J., Lo, K.F., Xu, M.Z. (1999-11). Role of hole fluence in gate oxide breakdown. IEEE Electron Device Letters 20 (11) : 586-588. ScholarBank@NUS Repository. https://doi.org/10.1109/55.798052
Abstract: A simple model which links the primary hole and Fowler-Nordheim (FN) electron injections to oxide breakdown is established and the calculation based on this model is in good agreement with our experiments. When the sum of the active trap density Dpri due to primary hole injection and the active trap density Dn due to FN electron injection reaches a critical value Dcri, the oxide breaks down. The hole is two orders of magnitude more effective than FN electron in causing breakdown. These new findings are imperative in predicting oxide reliability and device lifetime.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81122
ISSN: 07413106
DOI: 10.1109/55.798052
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