Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1431395
Title: Responsivities of n-type GaAs/InGaAs/AlGaAs step multiple-quantum-well infrared detectors
Authors: Cheah, C.W.
Karunasiri, G. 
Tan, L.S. 
Zhou, L.F.
Issue Date: 7-Jan-2002
Citation: Cheah, C.W., Karunasiri, G., Tan, L.S., Zhou, L.F. (2002-01-07). Responsivities of n-type GaAs/InGaAs/AlGaAs step multiple-quantum-well infrared detectors. Applied Physics Letters 80 (1) : 145-147. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1431395
Abstract: The responsivities of bound-to-bound transitions in an n-type Al 0.15Ga0.85As/GaAs/In0.15Ga0.85As multiple-quantum-well infrared photodetector had been measured, using both the 45° facet edge coupling scheme as well as direct back side illumination. It was found that the transverse electric (TE) mode responsivity was slightly redshifted in the 9 μm spectral region, and its magnitude was about 1%, with respect to the mixed TE and transverse magnetic (TM) mode infrared radiation, when direct back side illumination was employed. These observations were in good agreement with theoretical calculations using a 14-band k.p model. The much larger TE response observed when the 45° facet edge coupling scheme was employed was probably due to mesa edge scattering. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81106
ISSN: 00036951
DOI: 10.1063/1.1431395
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