Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0921-5107(99)00487-0
Title: Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system
Authors: Chim, W.K. 
Choi, W.K. 
Leong, K.K.
Teh, L.K.
Issue Date: 15-Mar-2000
Citation: Chim, W.K., Choi, W.K., Leong, K.K., Teh, L.K. (2000-03-15). Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 72 (2) : 135-137. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-5107(99)00487-0
Abstract: Random telegraphic signals (RTS) have been observed in large-area aluminium-silicon oxide-silicon capacitors, rapid thermal annealed (RTA) in argon at 600-700°C for 50 s. The noise spectra of these devices at higher biases showed a Lorenztian spectrum between 30-400 Hz. We suggested that the RTA process has produced weak spots in the devices. The filling and emptying process of a trap near the weak spot modulates the barrier height and resulted in the RTS and Lorentzian spectrum observed in these devices.
Source Title: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/81052
ISSN: 09215107
DOI: 10.1016/S0921-5107(99)00487-0
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