Please use this identifier to cite or link to this item:;2-7
Title: Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K
Authors: Li, W.S. 
Shen, Z.X. 
Feng, Z.C. 
Chua, S.J. 
Issue Date: 1999
Citation: Li, W.S.,Shen, Z.X.,Feng, Z.C.,Chua, S.J. (1999). Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K. Surface and Interface Analysis 28 (1) : 173-176. ScholarBank@NUS Repository.;2-7
Abstract: First-order Raman scattering of a hexagonal GaN film is studied in the temperature range T = 78-870 K. The temperature dependence of its five Raman modes is obtained, where both the line width and Raman shift exhibit a quadratic dependence on temperature in our measured temperature range. Excellent agreement was obtained between the experimental data and the calculated results based on a model involving three-phonon and four-phonon coupling. In addition, the splitting between the longitudinal-optical (LO) and transverse-optical (TO) phonons was found to decrease with increasing temperature. From these data, a weak non-linear decrease of the transverse effective charge with increasing temperature is derived. Comparison of the transverse effective charge eT* at room temperature was made between experimental data and theoretical calculations by a pseudopotential expression and bond orbital model (BOM). Good agreement between theory and experiment was achieved.
Source Title: Surface and Interface Analysis
ISSN: 01422421
DOI: 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7
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