Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/81037
DC Field | Value | |
---|---|---|
dc.title | Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si | |
dc.contributor.author | Sundaram, K. | |
dc.contributor.author | Choi, W.K. | |
dc.contributor.author | Ling, C.H. | |
dc.date.accessioned | 2014-10-07T03:03:59Z | |
dc.date.available | 2014-10-07T03:03:59Z | |
dc.date.issued | 1993-08-10 | |
dc.identifier.citation | Sundaram, K.,Choi, W.K.,Ling, C.H. (1993-08-10). Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si. Thin Solid Films 230 (2) : 145-149. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00406090 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81037 | |
dc.description.abstract | Quasi-static and high frequency capacitance-voltage (C-V) measurements of Al/Ta2O5/SiO2/Si (MTOS) capacitors are analysed. Space charge build-up at the Ta2O5-SiO2 interface and the frequency response of these charges are explained. It is also found that the leakage current is not the sole contributor to the discrepancies observed in quasi-static measurements, as suggested in the literature. An estimate of the interface charge is also presented. © 1993. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Thin Solid Films | |
dc.description.volume | 230 | |
dc.description.issue | 2 | |
dc.description.page | 145-149 | |
dc.description.coden | THSFA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.