Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81037
Title: Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si
Authors: Sundaram, K.
Choi, W.K. 
Ling, C.H. 
Issue Date: 10-Aug-1993
Citation: Sundaram, K.,Choi, W.K.,Ling, C.H. (1993-08-10). Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si. Thin Solid Films 230 (2) : 145-149. ScholarBank@NUS Repository.
Abstract: Quasi-static and high frequency capacitance-voltage (C-V) measurements of Al/Ta2O5/SiO2/Si (MTOS) capacitors are analysed. Space charge build-up at the Ta2O5-SiO2 interface and the frequency response of these charges are explained. It is also found that the leakage current is not the sole contributor to the discrepancies observed in quasi-static measurements, as suggested in the literature. An estimate of the interface charge is also presented. © 1993.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/81037
ISSN: 00406090
Appears in Collections:Staff Publications

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