Please use this identifier to cite or link to this item: https://doi.org/10.1002/1098-2760(20001005)27:13.0.CO;2-U
Title: Quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices
Authors: Rao, R.V.V.V.J. 
Chong, T.C. 
Tan, L.S. 
Lau, W.S.
Liou, J.J.
Issue Date: 5-Oct-2000
Source: Rao, R.V.V.V.J.,Chong, T.C.,Tan, L.S.,Lau, W.S.,Liou, J.J. (2000-10-05). Quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. Microwave and Optical Technology Letters 27 (1) : 61-66. ScholarBank@NUS Repository. https://doi.org/10.1002/1098-2760(20001005)27:13.0.CO;2-U
Abstract: This paper describes a quasianalytical model for the calculation of the current voltage characteristics of L.T GaAs and L.T. Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. Poisson's equation, the current continuity equation, and the Chang Fetterman relocity-field equations have been solved analytically. When the devices are operating in the linear region and the knee region, the one-dimensional Poisson equation is considered. When the devices are in the saturation regime, the two-dimensioanl Poisson equation is solved analytically. The resulting output current-voltage characteristics are in good agreement with experimental data. This model has been used to predict the RF performance and RF power capability of these MISFETs.
Source Title: Microwave and Optical Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81034
ISSN: 08952477
DOI: 10.1002/1098-2760(20001005)27:13.0.CO;2-U
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