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|Title:||Post-stress dual-trap interaction in hot-carrier stressed submicrometer n-channel metal-oxide-semiconductor field-effect-transistors|
|Authors:||Chim, W.K. |
|Keywords:||Capture cross section|
|Source:||Chim, W.K.,Chua, T.J. (1997). Post-stress dual-trap interaction in hot-carrier stressed submicrometer n-channel metal-oxide-semiconductor field-effect-transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (10) : 6170-6174. ScholarBank@NUS Repository.|
|Abstract:||The interaction of fast and slow interface traps during the post-stress period after maximum substrate current hot-carrier stress in submicrometer n-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) is investigated. Slow traps, initially present in the fresh device, are increased after the hot-carrier stress. Fast traps, which are negligible in the fresh device, are also generated by the electrical stress. For post-stress times less than 105 s, the density of the slow traps remains almost constant while there is a small increase in the density of the fast traps. However between post-stress times of 105 to 106 s, there is a noticeable decrease in the density of the slow traps which is correlated with an increase in the density of the fast traps. The capture cross-sections of the slow and fast traps tend to converge for post-stress times greater than 105 s. The results suggest that the slow traps are possibly evolving into fast traps.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Appears in Collections:||Staff Publications|
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