Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81001
Title: Post-stress dual-trap interaction in hot-carrier stressed submicrometer n-channel metal-oxide-semiconductor field-effect-transistors
Authors: Chim, W.K. 
Chua, T.J.
Keywords: Capture cross section
Hot carrier
Interface states
Interface traps
N-channel MOSFETs
Post-stress effect
Issue Date: 1997
Source: Chim, W.K.,Chua, T.J. (1997). Post-stress dual-trap interaction in hot-carrier stressed submicrometer n-channel metal-oxide-semiconductor field-effect-transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (10) : 6170-6174. ScholarBank@NUS Repository.
Abstract: The interaction of fast and slow interface traps during the post-stress period after maximum substrate current hot-carrier stress in submicrometer n-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) is investigated. Slow traps, initially present in the fresh device, are increased after the hot-carrier stress. Fast traps, which are negligible in the fresh device, are also generated by the electrical stress. For post-stress times less than 105 s, the density of the slow traps remains almost constant while there is a small increase in the density of the fast traps. However between post-stress times of 105 to 106 s, there is a noticeable decrease in the density of the slow traps which is correlated with an increase in the density of the fast traps. The capture cross-sections of the slow and fast traps tend to converge for post-stress times greater than 105 s. The results suggest that the slow traps are possibly evolving into fast traps.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/81001
ISSN: 00214922
Appears in Collections:Staff Publications

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