Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0268-1242/14/5/004
DC Field | Value | |
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dc.title | Photoreflectance study on the surface states of n-type GaN | |
dc.contributor.author | Liu, W. | |
dc.contributor.author | Li, M.F. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Akutsu, N. | |
dc.contributor.author | Matsumoto, K. | |
dc.date.accessioned | 2014-10-07T03:03:21Z | |
dc.date.available | 2014-10-07T03:03:21Z | |
dc.date.issued | 1999-05 | |
dc.identifier.citation | Liu, W., Li, M.F., Chua, S.J., Akutsu, N., Matsumoto, K. (1999-05). Photoreflectance study on the surface states of n-type GaN. Semiconductor Science and Technology 14 (5) : 399-402. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/14/5/004 | |
dc.identifier.issn | 02681242 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80979 | |
dc.description.abstract | Photoreflectance spectroscopy was used to study n-type GaN epilayers with doping concentrations ranging from 3×1017 cm-3 to 5×1018 cm-3. The relative change of reflectance signal |ΔR/R| was investigated as a function of doping concentration ND. The value of log10(|ΔR/R|) was found to be proportional to log10 (ND) with a slope of -1.2±0.2. This result can be explained by a simple model based on an assumption that low-density surface states exist in the surface of GaN. The result may clarify certain issues in the existing Schottky barrier experiments. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1088/0268-1242/14/5/004 | |
dc.description.sourcetitle | Semiconductor Science and Technology | |
dc.description.volume | 14 | |
dc.description.issue | 5 | |
dc.description.page | 399-402 | |
dc.description.coden | SSTEE | |
dc.identifier.isiut | 000080303700005 | |
Appears in Collections: | Staff Publications |
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