Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/14/5/004
Title: Photoreflectance study on the surface states of n-type GaN
Authors: Liu, W.
Li, M.F. 
Chua, S.J. 
Akutsu, N.
Matsumoto, K.
Issue Date: May-1999
Source: Liu, W., Li, M.F., Chua, S.J., Akutsu, N., Matsumoto, K. (1999-05). Photoreflectance study on the surface states of n-type GaN. Semiconductor Science and Technology 14 (5) : 399-402. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/14/5/004
Abstract: Photoreflectance spectroscopy was used to study n-type GaN epilayers with doping concentrations ranging from 3×1017 cm-3 to 5×1018 cm-3. The relative change of reflectance signal |ΔR/R| was investigated as a function of doping concentration ND. The value of log10(|ΔR/R|) was found to be proportional to log10 (ND) with a slope of -1.2±0.2. This result can be explained by a simple model based on an assumption that low-density surface states exist in the surface of GaN. The result may clarify certain issues in the existing Schottky barrier experiments.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/80979
ISSN: 02681242
DOI: 10.1088/0268-1242/14/5/004
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