Photoreflectance study on the surface states of n-type GaN

Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/14/5/004

Title:	Photoreflectance study on the surface states of n-type GaN
Authors:	Liu, W. Li, M.F. Chua, S.J. Akutsu, N. Matsumoto, K.
Issue Date:	May-1999
Citation:	Liu, W., Li, M.F., Chua, S.J., Akutsu, N., Matsumoto, K. (1999-05). Photoreflectance study on the surface states of n-type GaN. Semiconductor Science and Technology 14 (5) : 399-402. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/14/5/004
Abstract:	Photoreflectance spectroscopy was used to study n-type GaN epilayers with doping concentrations ranging from 3×1017 cm-3 to 5×1018 cm-3. The relative change of reflectance signal \|ΔR/R\| was investigated as a function of doping concentration ND. The value of log10(\|ΔR/R\|) was found to be proportional to log10 (ND) with a slope of -1.2±0.2. This result can be explained by a simple model based on an assumption that low-density surface states exist in the surface of GaN. The result may clarify certain issues in the existing Schottky barrier experiments.
Source Title:	Semiconductor Science and Technology
URI:	http://scholarbank.nus.edu.sg/handle/10635/80979
ISSN:	02681242
DOI:	10.1088/0268-1242/14/5/004
Appears in Collections:	Staff Publications

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