Please use this identifier to cite or link to this item:
|Title:||Photoreflectance study of band-gap renormalization in Si-doped GaN|
|Authors:||Zhang, X. |
|Source:||Zhang, X.,Chua, S.-J.,Liu, W.,Chong, K.-B. (1998-06-15). Photoreflectance study of band-gap renormalization in Si-doped GaN. Journal of Crystal Growth 189-190 : 687-691. ScholarBank@NUS Repository.|
|Abstract:||Si-doped n-GaN films grown by metal-organic chemical vapor deposition (MOCVD) have been studied by photoreflectance (PR) spectroscopy. Based on the intense and plentiful optical transitions observed in room temperature PR spectra and the fitting with theoretical calculation under weak-field approximation, the energy positions of the near band-edge transition for n-GaN samples with different Si-doping levels were determined. Furthermore, according to the observed remarkable red shift in the near band-edge transition energy with increasing the carrier concentration and by the approach of the many-body theory, the band-gap renormalization coefficient for GaN is derived to be (2.4 ± 0.5) × 10 -8 eV cm. This value is found to be nearly 35% larger than that for GaAs and can be used to interpret the measurement results reported by other research groups satisfactorily. © 1998 Elsevier Science B.V. All rights reserved.|
|Source Title:||Journal of Crystal Growth|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 10, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.