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https://scholarbank.nus.edu.sg/handle/10635/80902
DC Field | Value | |
---|---|---|
dc.title | Optical properties of hydrogenated amorphous silicon carbide films | |
dc.contributor.author | Choi, W.K. | |
dc.date.accessioned | 2014-10-07T03:02:32Z | |
dc.date.available | 2014-10-07T03:02:32Z | |
dc.date.issued | 2000 | |
dc.identifier.citation | Choi, W.K. (2000). Optical properties of hydrogenated amorphous silicon carbide films. Diffusion and Defect Data. Pt A Defect and Diffusion Forum 177 : 29-42. ScholarBank@NUS Repository. | |
dc.identifier.issn | 10120386 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80902 | |
dc.description.abstract | The influence of plasma enhanced chemical vapour deposition conditions (rf power, hydrogen dilution), hydrocarbon source material, dopants and deposition techniques on the optical properties of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were examined. The parameters used for the discussion were the optical gap, the refractive index and the edge width parameter. The photoluminescence results of a-Si1-xCx:H films were also presented in this paper. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Diffusion and Defect Data. Pt A Defect and Diffusion Forum | |
dc.description.volume | 177 | |
dc.description.page | 29-42 | |
dc.description.coden | DDAFE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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